Interlayer coupling in ferromagnetic semiconductor superlattices
T. Jungwirth, W. A. Atkinson, B. H. Lee, A. H. MacDonald
Abstract
We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a MnxGa1-xAs/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan