Quantum conductivity corrections in two dimensional long-range disordered systems with strong spin-orbit splitting of electron spectrum
Alexander P. Dmitriev, Igor V. Gornyi, Valentin Yu. Kachorovskii
Abstract
We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed the negative correction related to electron-electron interactions. We discuss this result in the context of the problem of the metal-insulator transition in Si-MOSFET structures.
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