Probing the plateau-insulator quantum phase transition in the quantum Hall regime
R. T. F. van Schaijk, A. de Visser, S. Olsthoorn, H. P. Wei, A. M. M. Pruisken
Abstract
We report quantum Hall experiments on the plateau-insulator transition in a low mobility In.53 Ga.47 As/InP heterostructure. The data for the longitudinal resistance ρxx follow an exponential law and we extract a critical exponent κ= .55 .05 which is slightly different from the established value κ= .42 .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance σxx* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.
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