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Bulk Tunneling at Integer Quantum Hall Transitions

Ziqiang Wang, Shanhui Xiong

cond-mat.mes-hallarXiv:cond-mat/9812190

Abstract

The tunneling into the bulk of a 2D electron system (2DES) in strong magnetic field is studied near the integer quantum Hall transitions. We present a nonperturbative calculation of the tunneling density of states (TDOS) for both Coulomb and short-ranged electron-electron interactions. In the case of Coulomb interaction, the TDOS exhibits a 2D quantum Coulomb gap behavior, ν()=CQ/e4, with CQ a nonuniversal coefficient of quantum mechanical origin. For short-ranged interactions, we find that the TDOS at low bias follows ν()/ν(0)=1+(/0)γ, where γ is a universal exponent determined by the scaling dimension of short-ranged interactions.

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