Coulomb Charging Effects for Finite Channel Number
Georg Goeppert, Hermann Grabert, Christian Beck
Abstract
We consider quantum fluctuations of the charge on a small metallic grain caused by virtual electron tunneling to a nearby electrode. The average electron number and the effective charging energy are determined by means of perturbation theory in the tunneling Hamiltonian. In particular we discuss the dependence of charging effects on the number N of tunneling channels. Earlier results for N>>1 are found to be approached rather rapidly with increasing N.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan