A possible role of D- band in hopping conductivity and metal-insulator transition in 2D structures
V. I. Kozub, N. V. Agrinskaya, S. I. Khondaker, I. Shlimak
Abstract
A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D- band). Experimental studies of hopping magnetoresistance for Si delta doped GaAs/AlGaAs heterostructure give additional evidences for the model.
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