Characterisation of Commercially Available NUV-MT Silicon Photomultipliers

Abstract

Silicon Photomultipliers (SiPMs) based on NUV-MT technology offer improved photo-detection efficiency and reduced correlated noise compared to earlier designs, making them increasingly attractive for particle and astroparticle physics applications. We present a systematic characterisation of commercially available Broadcom AFBR-S4N series NUV-MT SiPMs over a wide range of temperatures and overvoltages, from -85oC to 23oC and from 10-16V overvoltage (VoV). Key performance parameters are measured, including breakdown voltage, gain, signal-to-noise ratio, dark count rate, afterpulsing probability, and both internal and external optical crosstalk. At 12Vov and 23oC a dark noise of 107.2+/-2.1 kcps/mm^2 is measured, consistent with manufacturer specifications. At 12Vov and -30oC the measurements yielded an average dark noise of 1.69+/-0.12 kcps/mm^2, an average gain of (6.88+/-0.15)x10^6, an average signal to noise ratio of 13.6+/-0.9, an average afterpulsing probability of (0.59+/-0.06)%, an average direct crosstalk probability of (26.49+/-0.28)%, an average delayed crosstalk probability of (0.72+/-0.10)%, and an average external crosstalk probability of (0.10+/-0.04)%.