Impact of Environmental Stress on Low Gain Avalanche Diode Sensors Response

Abstract

Low Gain Avalanche Diodes or LGADs are silicon sensors capable of achieving excellent timing resolution due to their characteristic internal gain. Detectors based on LGAD technology play a crucial role in High Energy and Nuclear Physics experiments, among other applications. However, their performance is affected by environmental factors such as temperature, humidity, and storage conditions. A systematic evaluation of the response of LGAD sensors as a function of these environmental parameters is therefore of essential importance for any application. LGAD sensors fabricated at the Brookhaven National Laboratory are characterized and stress-tested against various operating conditions, such as rapid temperature and humidity changes. Dedicated and detailed simulations are used to interpret the experimental results.